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Theses by Dr. Rashmi Jha

List of selected papers published by Dr. Rashmi Jha.

  • R.Jha, J.Choung, R.J.Nemanich and V.Misra, "A Systematic Approach of Understanding and Retaining PMOS Compatible Work function of Metal Gate Electrodes on HfO2 Gate Dielectrics", Materials Research Society, Spring Meeting 2006.
  • B. Chen, R. Jha, H. Lazar, N. Biswas, J. Lee B. Lee, L. Wielunski, E. Garfunkel, V. Misra, "Influence of oxygen diffusion through capping layers of low work function metal gate electrodes", IEEE, Electron Device Letters, Vol. 27, Issue 4, April 2006.
  • B.Chen, R.Jha, V.Misra, "Work Function Tuning Via Ultra Thin Charged Reaction Layers Using AlTa and AlTaN Alloys", IEEE, Electron Device Letters, Vol. 27, Issue 9, September 2006.
  • D. J. Lichtenwalner, J.S. Jur, R. Jha, N. Inoue, B. Chen, V. Misra, A.I. Kingon, "High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes", Journal of the Electrochemical Society, 153 (9), F210-F214 2006.
  • Y.H. Kim, R. Choi, R. Jha, J.H. Lee, V. Misra, J.C. Lee, "Effects of Gate Electrodes and Barrier Heights on the Breakdown Characteristics and Weibull Slopes of HfO2 MOS Devices", Proceedings of the IEEE International Reliability Physics Symposium, 25-29, April 2004.
  • R. Jha, J. Gurganus, Y.H. Kim, R. Choi, J. Lee, V. Misra, "A Capacitance-Based Methodology for Work Function Extraction of Metals on High-k", Electron Device Letters, IEEE , Volume 25 , Issue 6, June 2004.
  • Y.H. Kim, R. Choi, R. Jha, J.H. Lee, V. Misra, J.C. Lee, "Effects of Barrier Height (fB) and the Nature of Bi-Layer Structure on the Reliability of High-k Dielectrics with Dual Metal Gate (Ru & Ru-Ta alloy) Technology", IEEE Symposium on VLSI Technology, June 2004.
  • R. Jha, J.H. Lee, B. Chen, H.R. Lazar, J. Gurganus, N. Biswas, P. Majhi, G. Brown, V. Misra, "Evaluation of Fermi Level Pinning in Low, Midgap and High Workfunction Metal Gate Electrodes on ALD and MOCVD HfO2 under High Temperature Exposure", Proceedings of the IEEE International Electron Devices Meeting, 2004.
  • R. Jha and V. Misra, "Optimized Methodology to Extract Work Function of Metal Gates on High-K Dielectrics", Technical Report submitted to SRC/SEMATECH FEP Transition Center Review, November 2004.
  • J.H. Lee, Y.S. Suh, H. Lazar, R. Jha, J. Gurganus, Y. Lin, V. Misra, "Compatibility of Dual Metal Gate Electrodes with High-k Dielectrics for CMOS", Proceedings of the IEEE International Electron Devices Meeting, 8-10 December 2003.
  • H.R. Lazar, R. Jha, Y.H. Kim, R. Choi, J. Lee, V.Misra, "Characterization of Mobility with Candidate Metal Gate Electrodes on HfO2 ", 35th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, December 2004.
  • R. Jha, B. Lee, B. Chen, S.R. Novak, P. Majhi, V. Misra, "Dependence of PMOS Metal Work Functions on Surface Conditions of High-K Gate Dielectrics", Proceedings of IEEE International Electron Devices Meeting, 2005.
  • R. Jha, J.H.Lee, P. Majhi, V. Misra, "Investigation of Work Function Tuning using Multiple Layer Metal Gate Electrodes Stacks for Complementary Metal Oxide Semiconductor Applications", Applied Physics Letters, Vol 87, 223503, 2005.
Last Updated: 2/9/17