Back Contact to CdTe Device Research
| Faculty: , Rob Collins , Randy Ellingson , Michael Heben , Dengbing Li , Adam Phillips , Nik Podraza , Zhaoning Song , Indra Subedi , Yanfa Yan |
| Students: , Fadhil Alfadhili , Bhuiyan Anwar , Rasha Awni , Griffin Barros-King , Ebin Bastola , Sandip Bista , Jacob Gibbs , Corey Grice , Manoj Jamarkattel , Niva Jayswal , Kamala Khanal Subedi , Mark Monarch , Dipendra Pokhrel , Gazi Quader , Mohammed Razooqi , Niraj Shrestha , Austin Snyder , Biswas Subedi |
| Alumni: , Dipendra Adhikari , Khagendra Bhandari , Alex Cimaroli , Jonathan DeWitt , Adam Halaoui , Max Junda , Rajendra Khanal , Prakash Koirala , Patrick Krantz , Jian Li , Geethika Liyanage , AJ Mathews , Naba Paudel , Paul Roland , Xinxuan Tan , Nafsika Theodoropoulous , Brandon Tompkins , Suneth Watthage , Nick Xiao , Rosa Zartman |
CdTe has a deep valence band at -5.9 eV, making it difficult to make a low-barrier back contact. Historically, doping the back of CdTe with Cu has been used to reduce this barrier. More recently, inclusion of a buffer layer, typically a semiconductor, has shown promising results and one such material is currently used in commercially available panels. At PVIC, we are investigating a number of materials to reduce this barrier at the back contact in an attempt to improve device performance and reduce cost. Click through the slide show to learn more about our projects.