Electrical Engineering and Computer Science

Dr. Raghav Khanna, Ph.D


Associate Professor

Contact Information

EECS Department
The University of Toledo
Toledo,OH 43606 
Tel: (419) 530-8183 
Office: NI 2056 
E-mail: raghav.khanna@utoledo.edu 

Research Interests

  • Wide bandgap semiconductor device modeling for next generation power electronic circuit applications including renewable energy systems, electric maritime and aircraft systems, and electric vehicular circuits
  • Renewable energy integration particularly in photovoltaic and wind power


Raghav Khanna received the PhD degree from the University of Pittsburgh in 2014 and joined the EECS department here at UT in 2015. His research interests are in modeling and characterizing wide bandgap semiconductors for applications in next generation power electronics including renewable energy, electric aircraft and maritime systems, as well as low power consumer electronics. His research has been sponsored by the US Dept. of Defense and the US Dept. of Energy. He continues to publish his research in IEEE Transactions journals as well as other high-impact peer-reviewed venues. He also serves on the technical program committee for flagship international conferences in power conversion. For his presentation on the transient performance of silicon carbide MOSFETs, Raghav won a Technical Presentation Award at the 2013 Applied Power Electronics Conference in Long Beach California. Raghav also has significant industry experience, including a brief stint at HRL Laboratories LLC in Malibu California. There he was directly involved with the development of gallium nitride based battery chargers for electric vehicles. At UT, Raghav serves on the EECS Dept. Graduate Committee, the College of Engineering Diversity Committee and the College of Engineering Executive Committee which is an elected position. He is also the adviser for the student-chapter of IEEE. He teaches various courses in electronics, power conversion, and circuit analysis. He is a member of IEEE, Power Electronics Society, and Electron Devices Society.

Recent Publications

[1] M. R. Hontz, Y. Cao, M. Chen, R. Li, A. Garrido, R. Chu, and R. Khanna, “Modeling and characterization of vertical GaN schottky didoes with AlGaN cap layers,” in IEEE Transactions on Electron Devices, vol. 64, no. 5, pp. 2172-2178, May 2017.

[2] A. Lemmon, R. Graves, R. L. Kini, M. R. Hontz, and R. Khanna, “Characterization and modeling of 10 kV silicon carbide modules for naval applications,” in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 5, no. 1, pp. 309-322, March 2017.

[3] M. R. Hontz, R. Chu, and R. Khanna, “TCAD modeling of a lateral GaN HEMT using empirical data,” in the 2018 IEEE Applied Power Electronics Conference, San Antonio, TX, USA, pp. 244-248, March 2018.

[4] A. J. Sellers, M. R. Hontz, R. Khanna, A. N. Lemmon, and A. Shahabi, “An automated SPICE modeling procedure for static and dynamic characterization of power FETs,” in the 2018 IEEE Applied Power Electronics Conference, San Antonio, TX, USA, pp. 255-262, March 2018.

[5] A. J. Sellers, C. Tine, R. L. Kini, M. R. Hontz, R. Khanna, A. N. Lemmon, A. Shahabi, and C. New, “Effects of parasitic inductance on performance of 600 V GaN devices,” in the 2017 IEEE Electric Ship Technology Symposium, Washington D.C., USA, pp. 50-55, August 2017.

[6] R. L. Kini, A. J. Sellers, M. R. Hontz, M. R. Kabir, and R. Khanna, “Comparison of GaN and Si-based photovoltaic power conversion circuits using various MPPT algorithms,” in the 2017 IEEE Applied Power Electronics Conference, Tampa Bay, FL, USA, pp. 2977 – 2982, March 2017.

[7] A. Barchowksy, J. P. Kozak, M. R. Hontz, W. E. Stanchina, G. F. Reed, Z-H. Mao, and R. Khanna, “Analytical and experimental optimization of external gate resistance for safe and rapid turn-on of normally off GaN HFETs,” in the 2017 IEEE Applied Power Electronics Conference, Tampa Bay, FL, USA, pp. 1958-1963, March 2017.

[8] R. Khanna, Q. Zhang, W. E. Stanchina, G. F. Reed, and Z-H. Mao, “Maximum power point tracking using model reference adaptive control,” in IEEE Transactions on Power Electronics, vol. 29, no. 3, pp. 1490-1499, March 2014.

[9] R. Khanna, A. Amhrein, W. E. Stanchina, G. F. Reed, and Z.-H. Mao, “An analytical model for evaluating the influence of device parasitics on Cdv/dt induced false turn-on in SiC MOSFETs,” in the 2013 IEEE Applied Power Electronics Conference and Exposition,” Long Beach, CA, USA, pp. 518-525, March 2013. (APEC Technical Presentation Award)

[10] R. Khanna, B. Hughes, W. E. Stanchina, R. Chu, K. Boutros, and G.F. Reed, “Modeling and characterization of a 300 V GaN based boost converter with 96% efficiency at 1 MHz,” in the 2014 IEEE Energy Conversion Congress and Exposition, Pittsburgh, PA, USA, pp. 92-99, September 2014.

Last Updated: 6/27/22